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JOURNAL OF MECHANICAL ENGINEERING  > 2021  >  10(2): 1164-1184.
Liu Chaoyue, Guo Jingshu, Yu Laiwen, Li Jiang, Zhang Ming, Li Huan, Shi Yaocheng, Dai Daoxin. Silicon/2D-material photodetectors: from near-infrared to mid-infrared[J]. JOURNAL OF MECHANICAL ENGINEERING, 2021, 10(2): 1164-1184. doi: 10.1038/s41377-021-00551-4
Citation: Liu Chaoyue, Guo Jingshu, Yu Laiwen, Li Jiang, Zhang Ming, Li Huan, Shi Yaocheng, Dai Daoxin. Silicon/2D-material photodetectors: from near-infrared to mid-infrared[J]. JOURNAL OF MECHANICAL ENGINEERING, 2021, 10(2): 1164-1184. doi: 10.1038/s41377-021-00551-4
shu

Silicon/2D-material photodetectors: from near-infrared to mid-infrared

doi: 10.1038/s41377-021-00551-4
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  • Corresponding author: Daoxin Dai (dxdai@zju.edu.cn)
  • Received Date: 19 Dec 2020
  • Rev Recd Date: 21 Apr 2021
  • Accepted Date: 06 May 2021
  • Publish Date: 09 Jun 2021
    Abstract
  • Two-dimensional materials (2DMs) have been used widely in constructing photodetectors (PDs) because of their advantages in flexible integration and ultrabroad operation wavelength range. Specifically, 2DM PDs on silicon have attracted much attention because silicon microelectronics and silicon photonics have been developed successfully for many applications. 2DM PDs meet the imperious demand of silicon photonics on low-cost, high-performance, and broadband photodetection. In this work, a review is given for the recent progresses of Si/2DM PDs working in the wavelength band from near-infrared to mid-infrared, which are attractive for many applications. The operation mechanisms and the device configurations are summarized in the first part. The waveguide-integrated PDs and the surface-illuminated PDs are then reviewed in details, respectively. The discussion and outlook for 2DM PDs on silicon are finally given.

     

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