Volume 70 Issue 10
May. 2021
Turn off MathJax
Article Contents
JOURNAL OF MECHANICAL ENGINEERING  > 2021  >  70(10): 103301.
Liu Chang-Shi. A reliable and accurate model of photoelectron yield spectrum and its applications[J]. JOURNAL OF MECHANICAL ENGINEERING, 2021, 70(10): 103301. doi: 10.7498/aps.70.20201729
Citation: Liu Chang-Shi. A reliable and accurate model of photoelectron yield spectrum and its applications[J]. JOURNAL OF MECHANICAL ENGINEERING, 2021, 70(10): 103301. doi: 10.7498/aps.70.20201729
shu

A reliable and accurate model of photoelectron yield spectrum and its applications

doi: 10.7498/aps.70.20201729
More Information
  • Corresponding author: Liu Chang-Shi, E-mail: lcswl@zjxu.edu.cn
  • Received Date: 18 Oct 2020
  • Rev Recd Date: 22 Dec 2020
    • Available Online: 27 May 2021
  • Publish Date: 27 May 2021
    Abstract
  • Experimental and theoretical research on photoelectron yield spectrum play a crucial role in electronic and photo-electronic materials and devices, and the reliable and precise estimation of photoelectron yield via photon energy is very important for detecting microscopic electrical information in photo-electronic materials and devices. Photoelectron yield is defined as the number of electrons emitted by per incident photon. Before this work, the technique was based on the interception of a plot of square root of photoelectron yield versus photon energy for metal-insulator hetero-junction, and that of a plot of cube root of photoelectron yield variation with photon energy for insulator-semiconductor hetero-junction. But, how to intercept the relationship between photoelectron yield and photon energy for semiconductor-semiconductor and metal-semiconductor hetero-junctions has not been known. Besides, many experimental plots of square root and cube root of photoelectron yield against photon energy are available, but none of them is a straight line. In order to obtain a more accurate and reliable barrier height, electrical structure of the junction, the energy level distribution of the energy band offset, defect density in the junction, and the valence band profile through the photoelectric yield spectrum, a reliable and accurate model of photoelectron yield spectrum is established via combining the solution to a differential equation and experimental results. A method is proposed to naturally determine the junction barrier height by using the experimental results of the internal current yield varying with the photon energy. The this method can be used to calculate the junction barrier height as accurately and reliably as possible, and the density and energy level distributions of the effective occupancy states of the electrons in the four junctions are obtained by using this photoelectric yield spectrum model, In addition, based on this model, this paper proves mathematically that the density and energy level distribution of the effective occupancy state of electrons present a peak shape. Therefore, the application prospects of this photoelectric yield spectrum model are demonstrated.

     

    • FullText(HTML)
  • loading
    • References(29)
  • [1]
    Hertz H 1887 Ann. Phys. 31 983
    [2]
    Einstein A 1905 Ann. Phys. 322 132 doi: 10.1002/andp.19053220607
    [3]
    Millikan R 1916 Phys. Rev. 7 18 doi: 10.1103/PhysRev.7.18
    [4]
    Fowler R H 1931 Phys. Rev. 38 45 doi: 10.1103/PhysRev.38.45
    [5]
    Liu C, Liu W L 2018 Optik 154 726 doi: 10.1016/j.ijleo.2017.10.131
    [6]
    Herbert B M 1977 J. Appl. Phys. 48 4729 doi: 10.1063/1.323539
    [7]
    Chapin D M, Fuller C S, Pearson G L 1954 J. Appl. Phys. 25 676 doi: 10.1063/1.1721711
    [8]
    Hanae T, Yousaf H K, Faisal B, Bernabe M S, Mohamed E T 2019 Sol. Energy 194 932 doi: 10.1016/j.solener.2019.11.017
    [9]
    Daisuke Y, Tsuyoshi Y, So N, Tomoyuki Y 2012 Phys. B 407 4485 doi: 10.1016/j.physb.2012.08.004
    [10]
    Kun X, Caifu Z, Qin Z, Peide Y, Kang W, Curt A R, David G, Nhan V N 2012 70th Device Research Conference DOI: 10.1109/DRC.2012.6256941
    [11]
    Afanas’ev V V, Chou H Y A, Stesmans C, Merckling X S 2011 Microelectron. Eng. 88 1050 doi: 10.1016/j.mee.2011.03.076
    [12]
    Akio O, Mitsuhisa I, Katsunori M, Seiichi M 2017 Microelectron. Eng. 17825 85
    [13]
    Kolomiiets N M, Afanas’ev V V, Jayachandran S, Delabie A, Heyns M, Stesmans A 2016 ECS J. Solid State Sci. Technol. 5 3008
    [14]
    Jenkins M A, McGlone J M, Wager J F, Conley J F J 2019 J. Appl. Phys. 125 055301 doi: 10.1063/1.5066569
    [15]
    Sang Y L, Jaewan C, Jaehyung C, Younsoo K, HanJin L, Hyeongtag J, Hyungtak S 2017 Curr. Appl. Phys. 17 267 doi: 10.1016/j.cap.2016.12.004
    [16]
    Shlyakhov J, Chai M, Yang S J, Wang V V, Afanas’ev M, Houssa A Stesmans 2018 Apl. Materials 6 026801 doi: 10.1063/1.5002617
    [17]
    Melanie A J, Tyler K, Dustin Z A, Wei L, Nhan V N, John F, Conley J 2018 Phys. Status Solidi RRL 12 1700437 doi: 10.1002/pssr.201700437
    [18]
    John F G, Myles A S, Nikhil J, Kevin L, Schulte R M F, William E, McMahon E E, Perl D J F 2018 IEEE J. photovoltaics 8 626 doi: 10.1109/JPHOTOV.2017.2778567
    [19]
    Vadim T, Inge A, Steven B, Cedric H, Iuliana R, Afanas'ev, V, Michel H, Andre S 2019 Thin Solid Films 674 39 doi: 10.1016/j.tsf.2019.01.036
    [20]
    Shalish L, Kronik G S, Yoram S, Eizenberg M 2000 Appl. Phys. Lett. 77 987 doi: 10.1063/1.1288813
    [21]
    Seber G A F, Wild J 2003 Nonlinear Regression (New Jersey: John Wiley & Sons, Inc.) p355
    [22]
    Almeida J, Tiziana D, Coluzza C, Margaritondo G, Bergossi O, Spajer M, Courjon D 1996 Appl. Phys. Lett. 69 2361 doi: 10.1063/1.117525
    [23]
    Shi J L, Ang L K 2015 Phys. Rev. Appl. 3014002
    [24]
    Isao S, Mitsuyuki Y, Hitoshi K 2009 Sol. Energy Mater. Sol. Cells 93 737 doi: 10.1016/j.solmat.2008.09.017
    [25]
    Carsten D, Daniel M, Julien G 2010 Phys. Rev. B 81 085202 doi: 10.1103/PhysRevB.81.085202
    [26]
    Liu C, Li F 2012 Opt. Commun. 285 2868 doi: 10.1016/j.optcom.2012.02.049
    [27]
    Liu C S 2020 Polym. Test. 91 106686 doi: 10.1016/j.polymertesting.2020.106686
    [28]
    Szijber J 1987 J. Electron Spectrosc. Relat. Phenom. 43 113 doi: 10.1016/0368-2048(87)80023-3
    [29]
    Ammar S, Bogdan J, Kowalski E, Nehme A K 2007 J. Electron Spectrosc. Relat. Phenom. 160 58 doi: 10.1016/j.elspec.2007.05.005
    • Relative Articles
    • Supplements(0)
    • Cited By
  • 加载中

Catalog

    Figures(4)  / Tables(1)

    Get Citation
    PDF
    XML

    Article Metrics

    Article views(250) PDF downloads(0) Cited by()
    Proportional views
    Related

    Copyright © 2009《 石油钻探技术 》 All Rights Reserved.

    Address：North-Star Times Tower, No.8 Beichendong Road, Chaoyang District, Beijing, China China Pos：100101

    Tel：010-84988317，84988356，84988357 Fax：021-64253812 Email：syzt@vip.163.com

    Beijing public network security equipment 11010502036328　Beijing ICP backup 17033152

    Supported by: Beijing Renhe Information Technology Co., Ltd.  

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return