Volume 70 Issue 10
May. 2021
Turn off MathJax
Article Contents
JOURNAL OF MECHANICAL ENGINEERING  > 2021  >  70(10): 108501.
Wang Ao-Shuang, Xiao Qing-Quan, Chen Hao, He An-Na, Qin Ming-Zhe, Xie Quan. Design and simulation of Mg2Si/Si avalanche photodiode[J]. JOURNAL OF MECHANICAL ENGINEERING, 2021, 70(10): 108501. doi: 10.7498/aps.70.20201923
Citation: Wang Ao-Shuang, Xiao Qing-Quan, Chen Hao, He An-Na, Qin Ming-Zhe, Xie Quan. Design and simulation of Mg2Si/Si avalanche photodiode[J]. JOURNAL OF MECHANICAL ENGINEERING, 2021, 70(10): 108501. doi: 10.7498/aps.70.20201923
shu

Design and simulation of Mg2Si/Si avalanche photodiode

doi: 10.7498/aps.70.20201923
More Information
  • Corresponding author: Xiao Qing-Quan, E-mail: qqxiao@gzu.edu.cn
  • Received Date: 16 Nov 2020
  • Rev Recd Date: 17 Dec 2020
    • Available Online: 27 May 2021
  • Publish Date: 27 May 2021
    Abstract
  • InGaAs and HgCdTe materials are widely used in short wave infrared photodetectors, which contain heavy metal elements. The massive use of the heavy metal elements naturally results in their scarcity, and the nonnegligible environmental pollution. Searching for other suitable materials for infrared devices becomes a key to solving the above problems. As a kind of abundant and eco-friendly material, Mg2Si has a high absorption coefficient in the near-infrared band. Its application in infrared detector makes it possible to replace the infrared devices containing toxic elements on the market in the future. The Mg2Si/Si avalanche photodiode(APD) with separation structure of absorption layer, charge layer and multiplication layer, with Mg2Si serving as the absorption layer, is constructed by using the Atlas module in Silvaco software. The effects of the thickness and doping concentration of the charge layer and multiplier layer on the distribution of internal electric field, punch-through voltage, breakdown voltage (Vb), C-V characteristics, and transient response of Mg2Si/Si SACM-APD are simulated. The effects of bias voltage on the I-V characteristics and spectral response are analyzed. The punch-through voltage, breakdown voltage, dark current density, gain coefficient (Mn) and the current amplification factor (M) after avalanche effect of APD are obtained after the structure optimization. According to the simulation results, the spectral response wavelength of the device is extended to 1.6 μm, so the selection of Mg2Si as the absorption layer effectively extends the spectral response band of Si based APD. When the wavelength of incident light is 1.31 µm and the optical power is 10 mW/cm2, the obtained punch-through voltage is 17.5 V, and the breakdown voltage is 50 V. When the bias voltage is 47.5 V (0.95Vb), the peak value of spectral response is 25 A/W at a wavelength of 1.1 μm, a density of dark current is about 3.6 × 10–5 A/cm2, a multiplication factor Mn is 19.6, and Mn achieves a maximum value of 102 when the device is broken down. Meanwhile, the current amplification factor M after avalanche effect is 75.4, and the current gain effect of the SACM structure is obvious. The peak value of spectral response for the pin-type photodiode in the previous study is only 0.742 A/W. Comparing with the pin-type photodiode, the spectral response of Mg2Si/Si SACM-APD is greatly improved. In this work, the structure parameters of the device are optimized, which lays a nice foundation for fabricating the high-performance devices.

     

    • FullText(HTML)
  • loading
    • References(30)
  • [1]
    莫秋燕, 赵彦立 2011 物理学报 60 072902 doi: 10.7498/aps.60.072902

    Mo Q Y, Zhao Y L 2011 Acta Phys. Sin. 60 072902 doi: 10.7498/aps.60.072902
    [2]
    Park S M, Grein C H 2019 J. Electron. Mater. 48 8163 doi: 10.1007/s11664-019-07659-9
    [3]
    Rogalski A 2005 Rep. Prog. Phys. 68 2267 doi: 10.1088/0034-4885/68/10/R01
    [4]
    Xu S J, Chua S J, Mei T, Wang X C, Zhang X H, Karunasiri G, Fan W J, Wang C H, Jiang J, Wang S, Xie X G 1998 Appl. Phys. Lett. 73 3153 doi: 10.1063/1.122703
    [5]
    Rogalski A 2002 Infrared. Phys. Technol. 43 187 doi: 10.1016/S1350-4495(02)00140-8
    [6]
    Rogalski A 2011 Infrared. Phys. Technol. 54 136 doi: 10.1016/j.infrared.2010.12.003
    [7]
    胡伟达, 李庆, 陈效双, 陆卫 2019 物理学报 68 120701 doi: 10.7498/aps.68.20190281

    Hu W D, Li Q, Chen X S, Lu W 2019 Acta Phys. Sin. 68 120701 doi: 10.7498/aps.68.20190281
    [8]
    LaBotz R 1963 J. Electrochem. Soc. 110 127 doi: 10.1149/1.2425689
    [9]
    Kato T, Sago Y, Fujiwara H 2011 J. Appl. Phys. 110 063723 doi: 10.1063/1.3642965
    [10]
    Borisenko V E 2000 Semiconducting Silicides (New York: Springer) pp137−179
    [11]
    Au-Yang M Y, Cohen M L 1969 Phys. Rev. 178 1358 doi: 10.1103/PhysRev.178.1358
    [12]
    Liao Y F, Fan M H, Xie Q, Xiao Q Q, Xie J, Yu H, Wang S L, Ma X Y 2018 Appl. Surf. Sci. 403 302 doi: 10.1016/j.apsusc.2018.06.211
    [13]
    Janega P L, McCaffrey J, Landheer D, Buchanan M, Denhoff M, Mitchel D 1988 Appl. Phys. Lett. 53 2056 doi: 10.1063/1.100496
    [14]
    Udono H, Tajima H, Uchikoshi M, Itakura M 2015 Jpn. J. Appl. Phys. 54 07JB06 doi: 10.7567/JJAP.54.07JB06
    [15]
    Udono H, Yamanaka Y, Uchikoshi M, Isshiki M 2013 J. Phys. Chem. Solids. 74 311 doi: 10.1016/j.jpcs.2012.10.005
    [16]
    El-Amir A A M, Ohsawa T, Nabatame T, Ohia A, Wadaa Y, Nakamuraa M, Fua K, Shimamuraa K, Ohashia N 2019 Mater. Sci. Semicond. Process. 91 222 doi: 10.1016/j.mssp.2018.11.033
    [17]
    陈豪, 肖清泉, 谢泉, 王坤, 史娇娜 2019 材料导报 33 3358 doi: 10.11896/cldb.19030017

    Chen H, Xiao Q Q, Xie Q, Wang K, Shi J N, 2019 Mater. Rep. 33 3358 doi: 10.11896/cldb.19030017
    [18]
    Forrest S R, Kim O K, Smith R G 1982 Appl. Phys. Lett. 41 95 doi: 10.1063/1.93302
    [19]
    张海燕, 汪琳莉, 吴琛怡, 王煜蓉, 杨雷, 潘海峰, 刘巧莉, 郭霞, 汤凯, 张忠萍, 吴光 2020 物理学报 69 074204 doi: 10.7498/aps.69.20191875

    Zhang H Y, Wang L L, Wu C Y, Wang Y R, Yang L, Pang H F, Liu Q L, Guo X, Tang K, Zhang Z P, Wu G 2020 Acta Phys. Sin. 69 074204 doi: 10.7498/aps.69.20191875
    [20]
    Nishida K, Taguchi K, Matsumoto Y 1979 Appl. Phys. Lett. 35 251 doi: 10.1063/1.91089
    [21]
    Deng Q, Wang Z, Wang S, Shao G D 2017 Sol. Energy 158 654 doi: 10.1016/j.solener.2017.10.028
    [22]
    Sekino K, Midonoya M, Udono H, Yamada Y Udono H 2011 Phys. Procedia 11 171 doi: 10.1016/j.phpro.2011.01.047
    [23]
    Martin A G 2008 Sol. Energy Mater. Sol. Cells 92 1305 doi: 10.1016/j.solmat.2008.06.009
    [24]
    Park C Y, Hyun K, Kang S G, Kim H M 1995 Appl. Phys. Lett. 67 3789 doi: 10.1063/1.115384
    [25]
    Smetona S, Matukas J, Palenskis V, Olechnovicius M, A. Kaminskas K, Mallard R 2004 Proceedings of SPIE-Photonics North 2004: Optical Components and Devices Ottawa, Canada, September 26–29, 2004 p834
    [26]
    谢天, 叶新辉, 夏辉, 李菊柱, 张帅君, 姜新洋, 邓伟杰, 王文静, 李玉莹, 刘伟伟, 李翔, 李天信 2020 红外与毫米波学报 39 0583 doi: 10.11972/j.issn.1001-9014.2020.05.008

    Xie T, Ye X H, Xia H, Li J Z, Zhang S J, Jiang X Y, Deng W J, Wang W J, Li Y Y, Liu W W, Li X, Li T X 2020 J. Infrared Millim. W. 39 0583 doi: 10.11972/j.issn.1001-9014.2020.05.008
    [27]
    Yuan H, Zhang J, Kim J, Meyer C, Laquindanum J, Kimchi J, Lei J 2018 Proceedings of SPIE -Infrared Sensors, Devices, and Applications VIII San Diego, United States, August 22–23, 2018 p107660 J-1
    [28]
    Wang Y D, Chen J, Xu J D, Li X Y 2018 Infrared Phys. Technol. 89 41 doi: 10.1016/j.infrared.2017.12.005
    [29]
    施敏, 伍国珏 著 (耿莉, 张瑞智 译) 2008 半导体器件物理 (第3版) (西安: 西安交通大学出版社) 第514−523页

    Sze S M, K. Ng K (translated by Geng L, Wu G J) 2008 Physics of Semiconductor Devices (3rd Ed.) (Xi’an: Xi’an Jiaotong University Press) pp514−523 (in Chinese)
    [30]
    Lee M J, Rucker H, Choi W Y 2012 IEEE Electron Device Lett. 33 80 doi: 10.1109/LED.2011.2172390
    • Relative Articles
    • Supplements(0)
    • Cited By
  • 加载中

Catalog

    Figures(13)  / Tables(3)

    Get Citation
    PDF
    XML

    Article Metrics

    Article views(268) PDF downloads(4) Cited by()
    Proportional views
    Related

    Copyright © 2009《 石油钻探技术 》 All Rights Reserved.

    Address：North-Star Times Tower, No.8 Beichendong Road, Chaoyang District, Beijing, China China Pos：100101

    Tel：010-84988317，84988356，84988357 Fax：021-64253812 Email：syzt@vip.163.com

    Beijing public network security equipment 11010502036328　Beijing ICP backup 17033152

    Supported by: Beijing Renhe Information Technology Co., Ltd.  

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return