Mg<sub>2</sub>Si/Si雪崩光电二极管的设计与模拟

王傲霜; 肖清泉; 陈豪; 何安娜; 秦铭哲; 谢泉

doi:10.7498/aps.70.20201923

Mg₂Si/Si雪崩光电二极管的设计与模拟

doi: 10.7498/aps.70.20201923

详细信息

通讯作者:
E-mail: qqxiao@gzu.edu.cn

中图分类号: 85.30.-z, 73.40.Lq, 85.60.Gz, 42.60.Lh
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出版历程
- 收稿日期: 2020-11-16
- 修回日期: 2020-12-17
- 网络出版日期: 2021-05-27
- 发布日期: 2021-05-27

Design and simulation of Mg₂Si/Si avalanche photodiode

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Corresponding author: Xiao Qing-Quan, E-mail: qqxiao@gzu.edu.cn

摘要

摘要: Mg₂Si作为一种天然丰富的环保材料, 在近红外波段吸收系数高, 应用于光电二极管中对替代市面上普遍使用的含有毒元素的红外探测器具有重要意义. 采用Silvaco软件中Atlas模块构建出以Mg₂Si为吸收层的吸收层、电荷层和倍增层分离结构Mg₂Si/Si雪崩光电二极管, 研究了电荷层和倍增层的厚度以及掺杂浓度对雪崩光电二极管的内部电场分布、穿通电压、击穿电压、C-V特性和瞬态响应的影响, 分析了偏置电压对I-V特性和光谱响应的影响, 得到了雪崩光电二极管初步优化后的穿通电压、击穿电压、暗电流密度、增益系数(M_n)和雪崩效应后对器件电流的放大倍数(M). 当入射光波长为1.31 µm, 光功率为0.01 W/cm²时, 光电二极管的穿通电压为17.5 V, 击穿电压为50 V, 在外加偏压为47.5 V (0.95倍击穿电压)下, 器件的光谱响应在波长为1.1 µm处取得峰值25 A/W, 暗电流密度约为3.6 × 10^–5 A/cm², M_n为19.6, 且M_n在器件击穿时有最大值为102, M为75.4. 根据模拟计算结果, 优化了器件结构参数, 为高性能的器件结构设计和实验制备提供理论指导.
- SACM-APD /
- Mg₂Si/Si异质结 /
- 光谱响应 /
- 增益系数
Abstract: InGaAs and HgCdTe materials are widely used in short wave infrared photodetectors, which contain heavy metal elements. The massive use of the heavy metal elements naturally results in their scarcity, and the nonnegligible environmental pollution. Searching for other suitable materials for infrared devices becomes a key to solving the above problems. As a kind of abundant and eco-friendly material, Mg₂Si has a high absorption coefficient in the near-infrared band. Its application in infrared detector makes it possible to replace the infrared devices containing toxic elements on the market in the future. The Mg₂Si/Si avalanche photodiode(APD) with separation structure of absorption layer, charge layer and multiplication layer, with Mg₂Si serving as the absorption layer, is constructed by using the Atlas module in Silvaco software. The effects of the thickness and doping concentration of the charge layer and multiplier layer on the distribution of internal electric field, punch-through voltage, breakdown voltage (V_b), C-V characteristics, and transient response of Mg₂Si/Si SACM-APD are simulated. The effects of bias voltage on the I-V characteristics and spectral response are analyzed. The punch-through voltage, breakdown voltage, dark current density, gain coefficient (M_n) and the current amplification factor (M) after avalanche effect of APD are obtained after the structure optimization. According to the simulation results, the spectral response wavelength of the device is extended to 1.6 μm, so the selection of Mg₂Si as the absorption layer effectively extends the spectral response band of Si based APD. When the wavelength of incident light is 1.31 µm and the optical power is 10 mW/cm², the obtained punch-through voltage is 17.5 V, and the breakdown voltage is 50 V. When the bias voltage is 47.5 V (0.95V_b), the peak value of spectral response is 25 A/W at a wavelength of 1.1 μm, a density of dark current is about 3.6 × 10^–5 A/cm², a multiplication factor M_n is 19.6, and M_n achieves a maximum value of 102 when the device is broken down. Meanwhile, the current amplification factor M after avalanche effect is 75.4, and the current gain effect of the SACM structure is obvious. The peak value of spectral response for the pin-type photodiode in the previous study is only 0.742 A/W. Comparing with the pin-type photodiode, the spectral response of Mg₂Si/Si SACM-APD is greatly improved. In this work, the structure parameters of the device are optimized, which lays a nice foundation for fabricating the high-performance devices.
- SACM-APD /
- Mg₂Si/Si heterojunction /
- spectral response /
- gain coefficient

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图 1 SACM-APD结构示意图

Figure 1. Schematic diagram of SACM-APD.

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图 2 APD的能带结构图

Figure 2. Energy band structure diagram of the APD.

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图 3 Mg₂Si与c-Si的光学特性　(a) Mg₂Si与c-Si的吸收系数(cm^–1)与入射能量的关系; (b) Mg₂Si与c-Si的折射率与波长的关系

Figure 3. Optical properties of Mg₂Si and c-Si: (a) Absorption coefficient(cm^–1) of the poly-Mg₂Si and c-Si; (b) refractive Index of the poly-Mg₂Si and c-Si.

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图 4 (a) 电荷层厚度为0.1 µm时器件的电场分布; (b) 电荷层厚度为0.2 µm时器件的电场分布

Figure 4. (a) Electric field distribution of the device with charge layer thickness of 0.1 µm; (b) electric field distribution of the device with charge layer thickness of 0.2 µm.

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图 5 Mg₂Si/Si SACM-APD器件在不同偏压下内部的载流子生成率

Figure 5. The influence of the different Bias voltage on the carrier generation rate.

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图 6 倍增层不同掺杂浓度时倍增层的电场分布

Figure 6. Electric field distribution of the multiplier layer under different doping concentrations.

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图 7 电荷层厚度、掺杂浓度与击穿电压和穿通电压之间的关系

Figure 7. The relation between the thickness and doping concentration of charge layer and the breakdown voltage, the punch-through voltage.

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图 8 不同倍增层厚度时的击穿电压与穿通电压

Figure 8. Breakdown voltage and penetration voltage at different thicknesses of the multiplier layer.

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图 9 倍增层不同掺杂浓度与穿通电压和击穿电压关系

Figure 9. Breakdown voltage and penetration voltage at different doping concentration of the multiplier layer.

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图 10 APD的I-V特性与增益系数

Figure 10. I-V characteristics and gain coefficient of APD.

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图 11 不同的偏置电压对APD光谱响应的影响

Figure 11. Effect of different bias voltages on the spectral response of APD.

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图 12 倍增层厚度对器件电容的影响

Figure 12. The influence of the thickness of multiplication layer on the capacitance of the device.

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图 13 不同倍增层厚度时器件的瞬态响应

Figure 13. Transient response of the device for different thickness of the multiplication layer.

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表 1 APD的结构参数

Table 1. Structural parameters of the APD.

层名	符号	厚度/μm	符号	浓度掺杂/ × 10¹⁶ cm^–3
金属电极层	—	0.1	—	0
Mg₂Si接触层	W_p	0.15	N_p	500
Mg₂Si吸收层	W_a	0.6—4	N_a	0.1
Si电荷层	W_c	0.1—0.3	N_c	6—14
Si倍增层	W_m	1	N_m	0.01—1
Si缓冲层	W_b	0.5	N_b	100
Si衬底	W_s	3.5	N_s	1000

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表 2 模拟计算中采用的各层基本参数

Table 2. The parameters of different layers in the simulation.

参数	Mg₂Si	c-Si^[21]
相对介电常数	20^[21]	11.9
电子迁移率/(cm²·V^–1·S^–1)	550^[21]	1350
空穴迁移率/(cm²·V^–1·S^–1)	70^[15]	500
材料带隙/eV	0.77^[9,21]	1.12
导带有效态密度/cm^–3	7.8 × 10¹⁸	2.8 × 10¹⁹
价带有效态密度/cm^–3	2.06 × 10¹⁹	1.04 × 10¹⁹
电子亲和力/eV	4.37^[21,22]	4.05

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表 3 模拟结果与目前国际水平对比

Table 3. Comparison of simulation results with current international level.

材料	暗电流密度/(A·cm^–2)	光谱响应/(A·W^–1)
InGaAs	5 × 10^–4^[26]	1.2^[26]
InGaAs/InP	7 × 10^–10^[26]	—
HgCdTe/CdTe/Si	0.007^[26]	—
HgCdTe/CdZnTe	2.7 × 10^–5^[27]	1.45^[27]
Mg₂Si	0.04^[14,16]	0.014^[14,16]
Mg₂Si/Si-pn	6 × 10^–7^[17]	0.32^[17]
Mg₂Si/Si-pin	1 × 10^–6^[17]	0.742^[17]
Mg₂Si/Si-SACM	3.6 × 10^–5	25

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